ECH8661
5 °
--2
° C
° C
10
7
5
3
2
1.0
7
5
| y fs | -- ID
C
=
Ta
75
25
[Nch]
VDS=10V
3
2
10
7
5
3
2
1.0
7
5
3
2
IS -- VSD
[Nch]
VGS=0V
3
2
0.1
0.1
7
5
3
2
7
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
100
7
5
Drain Current, ID -- A
SW Time -- ID
td(off)
IT13727
[Nch]
2
1000
7
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
Ciss
IT13728
[Nch]
f=1MHz
3
2
tf
5
3
10
7
5
3
td(on)
tr
VDD=15V
2
100
7
5
C o ss
Crss
2
0.1
2
3
5
7 1.0
2
3
5
7
VGS=10V
10 2
3
3
0
5
10
15
20
25
30
1m
ID=7A
ms
DC
0m
era
n(
25 °
Ta=
C)
10
9
8
7
6
5
4
3
VDS=15V
ID=7A
Drain Current, ID -- A
VGS -- Qg
IT13729
[Nch]
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
Drain-to-Source Voltage, VDS -- V
ASO
IDP=40A (PW≤10μs)
100
s
10
10
op s
tio
Operation in this
area is limited by RDS(on).
μ s
IT13730
[Nch]
Ta=25 ° C
Single pulse
When mounted on ceramic substrate
(900mm 2 × 0.8mm) 1unit
0.01
2
1
0
0
1
2
3
4
5
6
7
8
9
10
11
12
0.1
7
5
3
2
0.01
2 3 5 7 0.1 2 3 5 7 1.0 2 3
5 7 10
2 3
5
--3.0
Total Gate Charge, Qg -- nC
ID -- VDS
IT15732
[Pch]
--9
Drain-to-Source Voltage, VDS -- V
ID -- VGS
VDS= --10 V
IT15731
[Pch]
--8
--2.5
--7
--2.0
--6
--5
--1.5
--4
--1.0
VGS= --2.5V
--3
--2
--0.5
--1
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, VDS -- V
IT14855
Gate-to-Source Voltage, VGS -- V
IT14856
No. A1777-4/9
相关PDF资料
ECH8662-TL-H MOSFET N-CH DUAL 40V 6.5A ECH8
ECH8667-TL-H MOSFET P-CH DUAL 30V 5.5A ECH8
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